Publications

2000 ~ 2007

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2007

48. “Controlled growth of two-dimensional ZnO nanowalls by thermal chemical vapor deposition”, S.-D. Lee, H.-K. Park, S.-W. Kim, N.-M. Park, S.-H. Kim, S.-L. Maeng, and K.-K. Kim, J. Kor. Phys. Soc., Vol. 51, Issue 96, p303-307, Dec. 31 (2007)

 

47. “Route from ZnO thin films to nanostructures on Si substrates by metal organic chemical vapor deposition”, S.-W. Kim, Sz. Fujita, H.-K. Kim, S.-W. Jeong, and K.-K. Kim, J. Kor. Phys. Soc., Vol. 51, Issue 96, p207-211, Dec. 31 (2007)

 

46. “Fabrication and atmospheric-pressure-dependent electrical properties of a ZnO nanowire device”, E.-K, Kim, H.-Y. Lee, J. Park, S. J. Park, J. H. Kwak, S. E. Moon, S. Maeng, K.-H. Park, S.-W. Kim, H. J. Ji, and G. T. Kim, J. Kor. Phys. Soc., Vol. 51, Issue 12, p170-173, Oct. 31 (2007)

 

45. “A homojunction of single-crystalline ß-Ga2O3 nanowires and nanocrystals”, T. I. Shin, H. J. Lee, W. Y. Song, S.-W. Kim, M. H. Park, C. W. Yang, and D. H. Yoon, Nanotechnology, Vol. 18, Issue 34, p345305 (4 pages), Aug. 29 (2007)

 

44. “Fabrication of electrode Pt nanotubes for semiconductor capacitors”, B. I. Seo, U. A. Shaislamov, S.-W. Kim, H.-K. Kim, S. K. Hong, and B. Yang, Physica E, Vol. 37, Issue 1-2, p279-282, March (2007)

 

43. “Bi3.25La0.75Ti3O12 (BLT) nanotube capacitors for semiconductor memories”, B. I. Seo, U. A. Shaislamov, S.-W. Kim, H.-K. Kim, B. Yang, and S. K. Hong, Physica E, Vol. 37, Issue 1-2, p274-278, March (2007)

 

42. “ZnO nanotubes by template wetting process”, B. I. Seo, U. A. Shaislamov, M. H. Ha, S.-W. Kim, H.-K. Kim, and B. Yang, Physica E, Vol. 37, Issue 1-2, p241-244, March (2007)

 

41. “Formation of silicon oxide nanowires directly from Au/Si and Pd-Au/Si substrates”, H.-K. Park, B. Yang, S.-W. Kim, G.-H. Kim, D.-H. Youn, S.-H. Kim, and S.-L. Maeng, Physica E, Vol. 37, Issue 1-2, p158-162, March (2007)

 

40. “Thin film passivation of organic light emitting diodes by inductively coupled plasma chemical vapor deposition”, H.-K. Kim, S.-W. Kim, D.-G. Kim, J.-W. Kang, M. S. Kim, and W. J. Cho, Thin Solid Films, Vol. 515, Issue 11, p4758-4762, April 9 (2007)

 

39. “Effect of a Pt substrate on the growth and fabrication of ZnO schottky diodes”, T.-S. Kim, J.-M. Lee, H.-K. Kim, S.-W. Kim, and W. J Cho, J. Kor. Phys. Soc., Vol. 50, Issue 3, p594-597, March 15 (2007)

 

38. “ZnO nanowalls and nanocolumns grown by metalorganic chemical vapor deposition”, S.-W. Kim, Sz. Fujita, M.-S. Yi, H.-K. Kim, B. Yang, and D. H. Yoon, Sol. Stat. Phenomena, Vol. 124-126, Issue 1, p77-80, Jan. 1 (2007)

 

37. “Characteristics of amorphous Indium zinc oxide anode films on polycarbonate substrate for flexible organic light emitting diode”, H.-K. Kim, J.-H. Bae, J.-M. Moon, S.-W. Kim, S. W. Jeong, D.-G. Kim, and J.-W. Kang, Sol. Stat. Phenomena, Vol. 124-126, Issue 1, p399-402, Jan. 1 (2007)

 

36. “Epitaxial growth of ZnO nanowall networks on GaN/sapphire substrates”, S.-W. Kim, H.-K. Park, M.-S. Yi, N.-M. Park, J.-H. Park, S.-H. Kim, S.-L. Maeng, C.-J. Choi, and S.-E. Moon, Appl. Phys. Lett., Vol. 90, Issue 3, p033107 (3 pages), Jan. 15 (2007)

 

 

2006

35. “Vertically well-aligned ZnO nanowires on c-Al2O3 and GaN substrates by Au catalyst”, H.-K. Park, M. H. Oh, S.-W. Kim, G.-H. Kim, S. Lee, S.-H. Kim, K.-C. Kim, and S.-L. Maeng, ETRI Journal 28, 787 (2006) [Publication Cover]

 

34. “Surface confiment of InN-rich phase in thick InGaN on GaN”, T.-S. Kim, S.-W. Kim, H.-K. Kim, and J.-M. Lee, Superlattice and Microstructures 40, 545 (2006)

 

33. “Characterization of low refractive index SiOCF:H films designed to enhance the efficiency of light emission”, S. G. Yoon, W. J. Park, H. Kim, S.-W. Kim, and D. H. Yoon, J. Electroceram. 16, 469 (2006)

 

32. “Growth of ZnO nanostructures in a chemical vapor deposition process”, S.-W. Kim, Sz. Fujita, H.-K. Park, B. Yang, H.-K. Kim, and D. H. Yoon, J. Crystal Growth 292, 306 (2006)

 

31. “Bulk GaN single crystal growth and characterization using various alkali metal flux”, T. I. Shin, H. J. Lee, J. H. Lee, S.-W. Kim, S. J. Suh, and D. H. Yoon, J. Crystal Growth 292, 216 (2006)

 

30. “Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories”, B. I. Seo, U. A. Shaislamov, S. J. Lee, S.-W. Kim, I. S. Kim, S. K. Hong, and B. Yang, J. Crystal Growth 292, 315 (2006)

 

29. “Catalyst-free synthesis of ZnO nanowall networks on Si3N4/Si substrates by metalorganic chemical vapor deposition”, S.-W. Kim, Sz. Fujita, M.-S. Yi, and D. H. Yoon, Appl. Phys. Lett. 88, 253114 (2006)

 

28. “Effects of strain and interface roughness between an AlN buffer layer and a ZnO film grown by using radio-frequency magnetron sputtering”, M. S. Yi, T. S. Cho, J. W. Jeung, S.-W. Kim, J. M. Lee, J. Y. Oh, S. J. Park, and D. Y. Noh, J. Kor. Phys. Soc. 48, 1302 (2006)

 

27. “Electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt schottky contacts on Zn-terminated ZnO”, H.-K Kim, S.-W. Kim, B. Yang, S.-H. Kim, K. H. Lee, S.-H. Ji, and Y. S. Yoon, Jpn. J. Appl. Phys., Part 2 45, 1560 (2006)

 

26. “Direct Al cathode layer sputtering on LiF/Alq 3 using facing target sputtering with a mixture of Ar and Kr”, H.-K. Kim, S.-W. Kim, K.-S. Lee, and K. -H. Kim, Appl. Phys. Lett. 88, 83513 (2006)

 

 

2005

25. “Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering”, K.-K. Kim, H. Tampo, J.-O. Song, T.-Y. Seong, S.-J. Park, J.-M. Lee, S.-W. Kim, Sz. Fujita, and S. Niki, Jpn. J. Appl. Phys., Part 1 44, 4776 (2005)

 

24. “Artificial control of ZnO nanodots by ion-beam nanopatterning”, S.-W. Kim, M. Ueda, M. Funato, Sg. Fujita, and Sz. Fujita, J. Appl. Phys. 97, 104316 (2005)

 

23. “ZnO nanowires with high aspect ratios grown by metalorganic chemical vapor deposition using gold nanoparticles”, S.-W. Kim, Sz. Fujita, and Sg. Fujita, Appl. Phys. Lett. 86, 153119 (2005)

 

22. “High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing”, K.-K. Kim, S. Niki, J.-Y. Oh, J.-O Song, T.-Y. Seong, and S.-J. Park, Sz. Fujita, and S.-W. Kim, J. Appl. Phys. 97, 066103 (2005)

 

 

2004

21. “Fabrication and characterization of self- and artificially-assembled ZnO nanodots”, S.-W. Kim, M. Ueda, Sz. Fujita, and Sg. Fujita, J. Kor. Phys. Soc. 45, S803 (2004)

 

20. “Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition”, Sz. Fujita, S.-W. Kim, M. Ueda, and Sg. Fujita, J. Cryst. Growth 272, 138 (2004)

 

19. “Suppression of leakage current in InGaN/GaN multiple-quantum well LEDs by N2O plasma treatment”, H.-M. Kim, C. Huh, S.-W. Kim, N.-M. Park, and S.-J. Park, Electrochem. Solid State Lett. 7, G241 (2004)

 

18. “Focused ion beam patterning for fabrication of periodical two-dimensional Zinc Oxide nanodot arrays”, M. Ueda, S.-W. Kim, Sz. Fujita, and Sg. Fujita, Jpn. J. Appl. Phys., Part 2 43, L652 (2004)

 

17. “Selective growth of ZnO nanodots prepared by metalorganic chemical vapor deposition on focused ion beam-nanopatterned substrates”, S.-W. Kim, T. Kotani, M. Ueda, Sz. Fujita, and Sg. Fujita, Physica E 21, 601 (2004)

 

 

2003

16. “Selective formation of ZnO nanodots on nanopatterned substrates by metalorganic chemical vapor deposition”, S.-W. Kim, T. Kotani, M. Ueda, Sz. Fujita, and Sg. Fujita, Appl. Phys. Lett. 83, 3593 (2003)

 

15. “Self-tailored one-dimensional ZnO nanodot arrays formed by metalorganic chemical vapor deposition”, S.-W. Kim, M. Ueda, T. Kotani, Sz. Fujita, and Sg. Fujita, Jpn. J. Appl. Phys., Part 2 42, L568 (2003)

 

 

2002

14. “Self-organized ZnO quantum dots on SiO2/Si substrates by metalorganic chemical vapor deposition”, S.-W. Kim, Sz. Fujita, and Sg. Fujita, Appl. Phys. Lett. 81, 5036 (2002)

 

13. “Self-assembled three-dimensional ZnO nanosize islands on Si substrates with SiO2 intermediate layer by metalorganic chemical vapor deposition”, S.-W. Kim, Sz. Fujita, and Sg. Fujita, Jpn. J. Appl. Phys., Part 2 41, L543 (2002)

 

12. “Homoepitaxy growth of ZnO by metalorganic vapor phase epitaxy”, K. Ogata, T. Kawanishi, K. Sakurai, S.-W. Kim, K. Maejima, Sz. Fujita, and Sg. Fujita, Phys. Stat. Sol. (b) 229, 915 (2002)

 

11. “ZnO growth on Si substrates by metalorganic vapor phase epitaxy”, K. Ogata, S.-W. Kim, Sz. Fujita, and Sg. Fujita, J. Cryst. Growth 240, 112 (2002).

 

10. “Roles of the ZnO buffer layer to the properties of ZnO on Si substrates grown by metalorganic vapor phase epitaxy”, S.-W. Kim, K. Ogata, K. Maejima, Sz. Fujita, and Sg. Fujita, Institute of Physics Conference Series, No.170, pp.671-675, (2002)

 

 

2001

9. “Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN”, C. Huh, S.-W. Kim, H.-M. Kim, D.-J. Kim, and S.-J. Park, Appl. Phys. Lett. 78, 1942 (2001)

 

8. “Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes”, C. Huh, S.-W. Kim, H. Kim, H.-M. Kim, H. Hwang, and S.-J. Park, Appl. Phys. Lett. 78, 1766 (2001)

 

7. “Dry etch of GaN/InGaN multi-quantum wells using inductively coupled Cl2/CH4/H2/Ar plasma”, J.-M. Lee, S.-W. Kim, and S.-J. Park, J. Electrochem. Soc. 148, G254, (2001)

 

 

2000

6. “Modeling of a GaN-based light emitting diode for uniform current spreading”, H. Kim, J.-M. Lee, C. Huh, S.-W. Kim, D.-J. Kim, and S.-J. Park, Appl. Phys. Lett. 77, 1903 (2000)

 

5. “Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment”, S.-W. Kim, J.-M. Lee, C. Huh, N.-M. Park, H. Kim, I.-H. Lee, and S.-J. Park, Appl. Phys. Lett. 76, 3079 (2000)

 

4. “Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma”, J.-M. Lee, K.-M. Chang, S.-W. Kim, C. Huh, I.-H. Lee, and S.-J. Park, J. Appl. Phys. 87, 7667 (2000)

 

3. “InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN”, C. Huh, H. Kim, S.-W. Kim, J.-M. Lee, D.-J. Kim, I.-H. Lee, and S.-J. Park, J. Appl. Phys. 87, 4464 (2000)

 

2. “Effective sulfur passivation of an n-type GaN surface by an alcoholic-based sulfide solution”, C. Huh, S.-W. Kim, H. Kim, I.-H. Lee, and S.-J. Park, J. Appl. Phys. 87, 4591 (2000)

 

1. “Electromigration-induced failure of GaN multi-quantum well light emitting diode”, H. Kim, H. Yang, C. Huh, S.-W. Kim, S.-J. Park, and H. Hwang, IEEE Electron. Lett. 36, 908 (2000)